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MRF21125SR3

Part Number	MRF21125SR3
Manufacturer	Motorola
Description	RF POWER FIELD EFFECT TRANSISTORS
Published	Jan 16, 2006
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF21125/D The RF Sub–Micron MOSFET Line RF Power Field...
Datasheet	MRF21125SR3 PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF21125/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz.
Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s .
To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L applications.
• Typical 2–carrier W–CDMA Performance for VDD = 28 Volts, IDQ = 1600 mA, f1 = 2.
1125 GHz, f2 = 2.
1225 GHz, Channel bandwidth = 3.
84 MHz, adjacent channels at ± 5 MHz , ACPR and IM3 measured in 3.
84 MHz bandwidth.
Peak/Avg = 8.
5 dB @ 0.
01% probability on CCDF.
Output Power — 20 Watts Efficiency — 18% Gain — 13 dB IM3 — –43 dBc ACPR — –45 dBc • 100% Tested under 2–carrier W–CDMA • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Pha...

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