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MRF21125SR3

Part Number	MRF21125SR3
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistors
Published	Mar 3, 2018
Detailed Description	ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - C...
Datasheet	MRF21125SR3 PDF File

Overview

ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz.
Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s .
To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications.
• Typical 2 1600 mA, Carrier W - CDMA f1 = 2112.
5 MHz, fP2e=rf2o1rm22a.
n5cMe Hfozr,VCDhDa=nn2e8l bVaonltds,wIiDdQth== 3.
84 MHz, adjacent channels at ± 5 MHz , ACPR and IM3 measured in 3.
84 MHz bandwidth.
Peak/Avg.
= 8.
5 dB @ 0.
01% probability on CCDF.
Output Power — 20 Watts Efficiency — 18% Gain — 13 dB IM3 — - 43 dBc ACPR — - 45 dBc • Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 125 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection ...

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