RF Power Field Effect Transistor
www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 6, 10/2006 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use i...
Motorola Semiconductor