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MRF6V2150NR1

Part Number	MRF6V2150NR1
Manufacturer	Freescale Semiconductor
Description	RF Power FET
Published	Jul 6, 2007
Detailed Description	Freescale Semiconductor Technical Data RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs D...
Datasheet	MRF6V2150NR1 PDF File

Overview

Freescale Semiconductor Technical Data RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for CW large--signal output and driver applications with frequencies up to 450 MHz.
Devices are unmatched and are suitable for use in industrial, medical and scientific applications.
• Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 450 mA, Pout = 150 Watts Power Gain — 25 dB Drain Efficiency — 68.
3% • Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 150 Watts CW Output Power Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Qualified Up to a Maximum of 50 VDD Operation • Integrated ESD Protection • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel.
R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MRF6V2150N Rev.
4, 4/2010 MRF6V2150NR1 MRF6V2150NBR1 10--450 MHz, 150 W, 50 V LATERAL N--CHANNEL SINGLE--ENDED BROADBAND RF POWER MOSFETs CASE 1486--03, STYLE 1 TO--270 WB--4 PLAST...

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