DatasheetsPDF.com

MRF6V2150N

Part Number	MRF6V2150N
Manufacturer	Motorola Semiconductor
Description	RF Power Field Effect Transistor
Published	Nov 14, 2006
Detailed Description	www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 6, 10/2006 R...
Datasheet	MRF6V2150N PDF File

Overview

www.
DataSheet4U.
com Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev.
6, 10/2006 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for wideband large - signal output and driver applications with frequencies up to 450 MHz.
Devices are unmatched and are suitable for use in industrial, medical and scientific applications.
• Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 450 mA, Pout = 150 Watts Power Gain — 25.
5 dB Drain Efficiency — 69% • Capable of Handling 10:1 VSWR, @ 50 Vdc, 210 MHz, 150 Watts Output Power • Integrated ESD Protection • Excellent Thermal Stability • Facilitates Manual Gain Control, ALC and Modulation Techniques • 225°C Capable Plastic Package • RoHS Compliant MRF6V2150N MRF6V2150NB PREPRODUCTION 10 - 450 MHz, 150 W, 50 V LATERAL N - CHANNEL SINGLE - ENDED BROADBAND RF POWER MOSFETs CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF6V2300N CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC MRF6V2300NB PARTS ARE SINGLE - ENDED Table 1.
Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Operating Junction Temperature (1,2) Symbol VDSS VGS Tstg TJ Value - 0.
5 +110 - 0.
5 + 12 - 65 to +150 225 Unit Vdc Vdc °C °C Table 2.
Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature TBD°C, TBD W CW Case Temperature TBD°C, TBD W CW Symbol RθJC Value (3) TBD TBD Unit °C/W 1.
Continuous use at maximum temperature will affect MTTF.
2.
MTTF calculator available at http://www.
freescale.
com/rf.
Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product.
(Calculator available when part is in production.
) 3.
Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.
freescale.
com/rf.
Select Documentation/Application Notes - AN1955.
This document contains information on a preproduction product.
Specifications and informa...

Similar Datasheet

MRF6V2150N RF Power Field Effect Transistor - Motorola Semiconductor
MRF6V2150NB RF Power Field Effect Transistor - Motorola Semiconductor
MRF6V2150NBR1 RF Power FET - Freescale Semiconductor
MRF6V2150NR1 RF Power FET - Freescale Semiconductor

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)