P2003BE
N-Channel Enhancement Mode
MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 20mΩ @VGS = 10V
ID 7A
PDFN 3x3S
ABSOLUTE MAXIMUM RATINGS (TJ = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source
Voltage
VDS 30
Gate-Source
Voltage
VGS ±20
TC = 25 °C
25
Continuous Drain Current
TC = 100 °C TA = 25 °C
ID
15 7
Pulsed Drain Current1
TA = 70 °C
IDM
5.
7 50
Avalanche Current
IAS 18
Avalanche Energy
L = 0.
1mH
EAS
16
TC = 25 °C
21
Power Dissipation
TC = 100 °C TA = 25 °C
PD
8 1.
7
TA = 70 °C
1
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
REV 1.
0
1 2014/6/19
P2003BE
N-Channel Enhancement M...