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P2003BVT

UNIKC
Part Number P2003BVT
Manufacturer UNIKC
Description N-Channel MOSFET
Published Feb 3, 2017
Detailed Description P2003BVT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 20mΩ @VGS = 10V ID 9A SOP-8 100% ...
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P2003BVT
P2003BVT

Overview
P2003BVT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 20mΩ @VGS = 10V ID 9A SOP-8 100% Rg tested 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 9 7 35 Avalanche Current IAS 8 Avalanche Energy L =0.
1mH EAS 3.
2 Power Dissipation TA= 25 °C TA =70 °C PD 2.
5 1.
6 Junction & Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.
) Tj, Tstg TL -55 to 150 275 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL RqJA TYPICAL MAXIMUM UNITS 50 °C / W REV 1.
0 1 2014/11/5 P2003BVT N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMI...


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