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P2003BT

UNIKC
Part Number P2003BT
Manufacturer UNIKC
Description N-Channel MOSFET
Published Feb 7, 2017
Detailed Description P2003BT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 20mΩ @VGS = 10V ID 39A TO-220 ABSO...
Datasheet PDF File P2003BT PDF File

P2003BT
P2003BT

Overview
P2003BT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 20mΩ @VGS = 10V ID 39A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 39 25 120 Avalanche Current IAS 21 Avalanche Energy L = 0.
1mH EAS 22 Power Dissipation TC = 25 °C TC = 100 °C PD 50 20 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL RqJC RqJA TYPICAL MAXIMUM 2.
5 50 UNITS °C / W REV 1.
0 1 2014/7/21 P2003BT N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage...


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