RU1H35L
N-Channel Advanced Power
MOSFET
MOSFET
Features
• 100V/40A, RDS (ON) =21mΩ(Typ.
)@VGS=10V
• Super High Dense Cell Design
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
Pin Description
TO-252
Applications
• High Speed Power Switching
N-Channel
MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source
Voltage
VGSS
Gate-Source
Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resis...