MOSFET
P-Channel 60-V(D-S)
MOSFET
SI2309
Features
◆ TrenchFET Power
MOSFET ◆ RoHS Compliant
Absolute Maximum Ratings Ta=25℃
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage Continuous Drain Current(TJ=150℃) *1,2 TA=25℃
TA=100℃
VGS ID
Pulsed Drain Current
IDM
Avalanche Current Power Dissipation*1,2
L = 0.
1 mH TA=25℃ TA=70℃
IAS PD
Operating Junction and Storage Temperature Range Tj.
Tstg
Maximum Junction-to-Ambient*2
RthJA
Maximum Junction-to-Ambient*3
*1.
Pulse Width limited by maximum junction temperature.
*2.
Surface Mounted on FR4 Board, t≤5sec.
*3.
Surface Mounted on FR4 Board.
Rating -60 ±20 -1.
25 -0.
85 -8 -5 1.
25 0.
8
-55 to 150 145 175
Unit V V A
A A W
℃ ...