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SI2309DS

Part Number	SI2309DS
Manufacturer	Vishay Siliconix
Description	P-Channel MOSFET
Published	Apr 8, 2005
Detailed Description	Si2309DS Vishay Siliconix P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -60 rDS(on) (W) 0.340 @ VGS = -10 V 0.55...
Datasheet	SI2309DS PDF File

Overview

Si2309DS Vishay Siliconix P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -60 rDS(on) (W) 0.
340 @ VGS = -10 V 0.
550 @ VGS = -4.
5 V ID (A) - 1.
25 -1 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2309DS (A9)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Avalanche Current Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range L = 0.
1 mH TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 100_C ID -0.
85 IDM IAS -8 -5 1.
25 0.
8 -55 to 150 W _C A Symbol VDS VGS Limit -60 "20 -1.
25 Unit V THERMAL RESISTANCE RATINGS Parameter t v ...

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