SPC6606
N & P Pair Enhancement Mode
MOSFET
DESCRIPTION The SPC6606 is the N-Channel and P-Channel enhancement mode power field effect transistors w h i c h are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low
voltage applications such as notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed.
FEATURES N-Channel
12V/4.
0A,RDS(ON)=26mΩ@VGS=4.
5V 12V/3.
0A,RDS(ON)=35mΩ@VGS=2.
5V 12V/2.
0A,RDS(ON)=50mΩ@VGS=1.
8V P-C...