DatasheetsPDF.com

SPC6601

SYNC POWER
Part Number SPC6601
Manufacturer SYNC POWER
Description N & P Pair MOSFET
Published May 20, 2014
Detailed Description SPC6601 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC6601 is the N- and P-Channel enhancement mode power field...
Datasheet PDF File SPC6601 PDF File

SPC6601
SPC6601

Overview
SPC6601 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC6601 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed.
APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter FEATURES  N-Channel 30V/2.
8A,RDS(ON)=68mΩ@VGS=10V 30V/2.
3A,RDS(ON)=78mΩ@VGS=4.
5V 30V/1.
5A,RDS(ON)=108mΩ@VGS=2.
5V  P-Channel -30V/-2.
8A,RDS(ON)=105mΩ@VGS=-10V -30V/-2.
5A,RDS(ON)=120mΩ@VGS=-4.
5V -30V/-1.
5A,RDS(ON)=148mΩ@VGS=-2.
5V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and maximum DC current capability  TSOT–23-6L package design PIN CONFIGURATION(TSOT–23-6L) PART MARKING 2020/04/09 Ver.
4 Page 1 SPC6601 N & P Pair Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 Symbol G1 S2 G2 D2 S1 D1 Description Gate 1 Source 2 Gate 2 Drain 2 Source 1 Drain1 ORDERING INFORMATION Part Number Package SPC6601TS26RGB TSOT-23-6L ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPC6601TS26RGB : Tape Reel ; Pb – Free ; Halogen -Free Part Marking 01 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current(Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient T ≤ 10sec Steady State VDSS VGSS ID IDM IS PD TJ TSTG RθJA Typical N-Channel P-Channel 30 -30 ±...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)