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SPC6604

SYNC POWER
Part Number SPC6604
Manufacturer SYNC POWER
Description N & P Pair MOSFET
Published May 20, 2014
Detailed Description SPC6604 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC6604 is the N- and P-Channel enhancement mode power field...
Datasheet PDF File SPC6604 PDF File

SPC6604
SPC6604

Overview
SPC6604 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC6604 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed.
APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter FEATURES  N-Channel 20V/4.
0A,RDS(ON)=50mΩ@VGS=4.
5V 20V/3.
4A,RDS(ON)=60mΩ@VGS=2.
5V 20V/2.
8A,RDS(ON)=75mΩ@VGS=1.
8V  P-Channel -20V/-3.
4A,RDS(ON)=85mΩ@VGS=-4.
5V -20V/-2.
4A,RDS(ON)=110mΩ@VGS=-2.
5V -20V/-1.
7A,RDS(ON)=130mΩ@VGS=-1.
8V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  TSOT-23-6L package design PIN CONFIGURATION( TSOT-23–6L ) PART MARKING 2020/04/09 Ver.
3 Page 1 SPC6604 N & P Pair Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 Symbol G1 S2 G2 D2 S1 D1 Description Gate 1 Source 2 Gate 2 Drain 2 Source 1 Drain1 ORDERING INFORMATION Part Number Package SPC6604TS26RGB TSOT-23-6L ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPC6604TS26RGB : Tape Reel ; Pb – Free ; Halogen -Free Part Marking 04 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current(Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient Thermal Resistance-Junction to Lead T ≤ 10sec Steady State Steady State VDSS VGSS ID IDM IS PD TJ...


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