SAMWIN
SW20N50
N-channel Power
MOSFET
Features
■ High ruggedness
MOSFET ■ RDS(ON) (Max 0.
27Ω)@VGS=10V ■ Gate Charge (Max 80nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
TO-3P
BVDSS : 500V ID : 20A* RDS(ON) : 0.
27ohm
1
2
2 3
1.
Gate 2.
Drain 3.
Source
General Description
This power
MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power
MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
This power
MOSFET is usually used at high efficient DC to DC converter block, high efficiency switch mode power supplies, power factor correction, electro...