MOSFETs Silicon P-Channel MOS (U-MOS)
TPC8133
1.
Applications
• Lithium-Ion Secondary Batteries • Power Management Switches
2.
Features
(1) Small footprint due to small and thin package (2) Low drain-source on-resistance: RDS(ON) = 11 mΩ (typ.
) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) (4) Enhancement mode: Vth = -0.
8 to -2.
0 V (VDS = -10 V, ID = -0.
5 mA)
3.
Packaging and Internal Circuit
TPC8133
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
SOP-8
4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source
voltage Gate-source
voltage Drain current (DC) Drain current (pulsed) Power dissipation Po...