TSM2N7000
60V N-Channel Enhancement Mode
MOSFET
Pin assignment: 1.
Gate 2.
Source 3.
Drain
VDS = 60V
ID = 200mA
RDS (on), Vgs @ 10V, Ids @ 500mA = 5.
0Ω
General Description
comThe TSM2N7000 is produced using high cell density, DMOS technology.
These products have been designed to
minimize on-state resistance while provide rugged, reliable and fast switching performance.
It can be used in most applications requiring up to 200mA DC and can deliver pulsed currents up to 500mA.
This product is particularly suited for low
voltage, low current application such as small servo motor control, power
MOSFET gate drivers, and other switching applications.
Features
High dens...