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TSM2N7002E

Taiwan Semiconductor Company
Part Number TSM2N7002E
Manufacturer Taiwan Semiconductor Company
Description 50V N-Channel Enhancement Mode MOSFET
Published Jun 25, 2008
Detailed Description TSM2N7002E 50V N-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = 50V RDS (on), Vgs @ 1...
Datasheet PDF File TSM2N7002E PDF File

TSM2N7002E
TSM2N7002E

Overview
TSM2N7002E 50V N-Channel Enhancement Mode MOSFET Pin assignment: 1.
Gate 2.
Source 3.
Drain VDS = 50V RDS (on), Vgs @ 10V, Ids @ 250mA = 3Ω RDS (on), Vgs @ 5V, Ids @ 50mA = 4Ω www.
DataSheet4U.
com Features Advanced trench process technology High density cell design for ultra low on-resistance High input impedance High speed switching No minority carrier storage time CMOS logic compatible input No secondary breakdown Compact and low profile SOT-363 package Block Diagram Ordering Information Part No.
TSM2N7002ECX TSM2N7002ECU Packing T&R (3kpcs/Reel) Package SOT-23 SOT-323 Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Ta = 25 oC Ta = 75 C Operating Junction Temperature Operating Junction and Storage Temperature Range TJ TJ, TSTG o Symbol VDS VGS ID IDM PD Limit 50 ± 20 250 1.
0 200 150 +150 - 55 to +150 Unit V V mA A mW o o C C Thermal Performa...


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