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TSM2N7002KD

Taiwan Semiconductor
Part Number TSM2N7002KD
Manufacturer Taiwan Semiconductor
Description 60V N-Channel MOSFET
Published Mar 24, 2011
Detailed Description TSM2N7002KD 60V N-Channel MOSFET SOT-363 Pin Definition: 1. Source 2 6. Drain 2 2. Gate 2 5. Gate 1 3. Drain 1 4. Source...
Datasheet PDF File TSM2N7002KD PDF File

TSM2N7002KD
TSM2N7002KD

Overview
TSM2N7002KD 60V N-Channel MOSFET SOT-363 Pin Definition: 1.
Source 2 6.
Drain 2 2.
Gate 2 5.
Gate 1 3.
Drain 1 4.
Source 1 PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 60 2 @ VGS = 10V 4 @ VGS = 4.
5V ID (mA) 300 200 Features ● ● ● ● Low On-Resistance ESD Protection High Speed Switching Low Voltage Drive Block Diagram Ordering Information Part No.
TSM2N7002KDCU6 RF Package SOT-363 Packing 3Kpcs / 7” Reel Dual N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous @ TA=25ºC Pulsed Continuous @ TA=25ºC Pulsed Symbol VDS VGS ID IDM IDR IDMR PD TJ TJ, TSTG Limit 60 ±20 300 800 300 800 300 +150 -55 to +150 Unit V V mA Drain Reverse Current Maximum Power Dissipation Operating Junction Temperature mA mW o o C C Operating Junction and Storage Temperature Range Thermal Performance Parameter Lead Temperature (1/8” from case) www.
DataSheet4U.
com Junction to Ambient Thermal Resistance (PCB mounted) Symbol TL RӨJA Limit 5 625 Unit S o C/W Notes: a.
Pulse width ≤300us, Duty cycle ≤2% b.
When the device is mounted on a glass epoxy board with area measuring 1 x 0.
75 x 0.
62 inch.
c.
The power dissipation of the package may result in a continuous drain current.
1/6 Version: B09 TSM2N7002KD 60V N-Channel MOSFET Electrical Specifications (Ta = 25oC, unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage Dynamic b Conditions VGS =0V, ID =250µA VDS =VGS, ID =250µA VGS =±20V, VDS =0V VDS =60V, VGS =0V VGS =10V, ID =300mA VGS =4.
5V, ID =100mA VDS =10V, ID =200mA IS =300mA, VGS =0V VDS =10V, ID = 250mA, VGS =4.
5V VDS = 25V, VGS = 0V, f = 1.
0MHz Symbol BVDSS VGS(TH) IGSS IDSS RDS(ON) gfs VSD Min 60 1.
0 ----100 -- Typ -1.
5 --1.
2 2 -0.
8 Max -2.
5 ±10 1.
0 2 4 -1.
4 Unit V V uA uA Ω mS V Total Gate Charge Input C...


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