DatasheetsPDF.com

13N60AF

nELL
Part Number 13N60AF
Manufacturer nELL
Description N-Channel Power MOSFET
Published May 11, 2016
Detailed Description SEMICONDUCTOR 13N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 13A, 600Volts DESCRIPTION The Nel...
Datasheet PDF File 13N60AF PDF File

13N60AF
13N60AF

Overview
SEMICONDUCTOR 13N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 13A, 600Volts DESCRIPTION The Nell 13N60 is a three-terminal silicon device with current conduction capability of 13A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max.
threshold voltage of 4 volts.
They are designed for use in applications such as switched mode power supplies.
DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications.
FEATURES RDS(ON) = 0.
26Ω @ VGS = 10V Ultra low gate charge(40nC max.
) Low reverse transfer capacitance (CRSS = 3pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-220AB (13N60A) GDS TO-220F (13N60AF) D (Drain) PRODUCT SUMMARY ID (A) VDSS (V) RDS(ON) (Ω) QG(nC) max.
13 600 0.
26 @ VGS = 10V 40 G (Gate) S (Source) ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL PARAMETER TEST CONDITIONS VDSS Drain to Source voltage TJ=25°C to 150°C VDGR Drain to Gate voltage RGS=20KΩ VGS Gate to Source voltage ID Continuous Drain Current TC=25°C TC=100°C IDM Pulsed Drain current(Note 1) IAR Avalanche current(Note 1) EAR Repetitive avalanche energy(Note 1) lAR=4.
3A,RGS=50Ω, VGS=10V EAS dv/dt PD Single pulse avalanche energy (Note 2) MOSFET dv/dt ruggedness Peak diode recovery dv/dt (Note 3) Total power dissipation (Derate above 25°C) lAS=4.
3A TC=25°C TO-220AB TO-220F TJ Operation junction temperature TSTG Storage temperature TL Maximum soldering temperature, for 10 seconds 1.
6mm from case Mounting torque, #6-32 or M3 screw VALUE 600 600 ±30 13 8.
2 39 4.
3 1.
2 235 100 20 116(0.
93) 34(0.
27) -55 to 150 -55 to 150 300 10 (1.
1) Note: 1.
Repetitive rating: pulse width limited by junction temperature.
.
2.
IAS=4.
3A, VDD=50V, RGS=25Ω, starting TJ = 25 °C.
3.
ISD ≤ 13A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, starting TJ = 25°C.
www.
nellsemi.
com Page 1 of 8 UNIT V A mJ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)