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13N60N

KEC
Part Number 13N60N
Manufacturer KEC
Description KF13N60N
Published Mar 20, 2014
Detailed Description SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast swit...
Datasheet PDF File 13N60N PDF File

13N60N
13N60N

Overview
SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for switching mode power supplies.
H KF13N60N N CHANNEL MOS FIELD EFFECT TRANSISTOR A N O Q B K FEATURES VDSS(Min.
)= 600V, ID= 13A Drain-Source ON Resistance : RDS(ON)=0.
56(Max.
) Qg(typ.
) =36nC @VGS =10V d D E M P P T 1 2 3 MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current @TC=25 Pulsed Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Drain Power Dissipation Tc=25 ) SYMBOL VDSS VGSS ID (Note1) (Note 2) (Note 1) (Note 3) IDP EAS EAR dv/dt PD Tj Tstg RATING 600 30 13 A 32 870 22.
5 4.
5 215 1.
72 150 -55 150 mJ mJ V/ns W W/ UNIT V V 1.
Gate 2.
Drain 3.
Source DIM MILLIMETERS _ 0.
20 A 15.
60 + _ 0.
20 B 4.
80 + _ 0.
20 C 19.
90 + _ 0.
20 D 2.
00 + _ 0.
20 d 1.
00 + _ 0.
20 E 3.
00 + _ 0.
20 3.
80 + F _ 0.
20 G 3.
50 + _ 0.
20 H 13.
90 + _ 0.
20 I 12.
76 + _ 0.
20 J 23.
40 + K 1.
5+0.
15-0.
05 _ 0.
30 L 16.
50 + _ 0.
20 M 1.
40 + _ 0.
20 13.
60 + N _ 0.
20 9.
60 + O _ 0.
30 P 5.
45 + _ 0.
10 Q 3.
20 + _ 0.
20 R 18.
70 + 0.
60+0.
15-0.
05 T F C J I G TO-3P(N)-E Derate above25 Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient RthJC RthJA 0.
58 40 /W /W Marking D 1 KF13N60 N 801 2 G S 1 2 PRODUCT NAME LOT NO 2008.
10.
2 Revision No : 1 L R 1/6 Free Datasheet http://www.
Datasheet4U.
com KF13N60N ELECTRICAL CHARACTERISTICS (Tc=25 CHARACTERISTIC ) TEST CONDITION MIN.
TYP.
MAX.
UNIT SYMBOL Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance BVDSS BVDSS/ Tj IDSS Vth IGSS RDS(ON) ID=250 A, VGS=0V ID=250 A, Referenced to 25 VDS=600V, VGS=0V, VDS=VGS, ID=250 A VGS=...


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