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P2806BD

UNIKC
Part Number P2806BD
Manufacturer UNIKC
Description N-Channel MOSFET
Published May 11, 2016
Detailed Description P2806BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 28mΩ @VGS = 10V ID 30A TO-252 ABSO...
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P2806BD
P2806BD

Overview
P2806BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 28mΩ @VGS = 10V ID 30A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 30 19 100 Avalanche Current IAS 30 Avalanche Energy L = 0.
1mH EAS 43 Power Dissipation TC = 25 °C TC = 100 °C PD 50 20 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL RqJC RqJA TYPICAL MAXIMUM 2.
5 40 UNITS °C / W Rev 1.
2 1 2015/10/23 P2806BD N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-...


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