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P2806AT

UNIKC
Part Number P2806AT
Manufacturer UNIKC
Description N-Channel MOSFET
Published Feb 1, 2017
Detailed Description P2806AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 30mΩ @VGS = 10V ID 34A TO-220 ABSO...
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P2806AT
P2806AT

Overview
P2806AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 30mΩ @VGS = 10V ID 34A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 34 21 110 Avalanche Current IAS 29 Avalanche Energy L = 0.
1mH EAS 41 Power Dissipation TC = 25 °C TC = 100 °C PD 58 23 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL RqJC RqJA TYPICAL MAXIMUM 2.
15 62.
5 UNITS °C / W Ver 1.
0 1 2012/4/13 P2806AT N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold V...


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