DatasheetsPDF.com

H8050S

Shantou Huashan Electronic Devices
Part Number H8050S
Manufacturer Shantou Huashan Electronic Devices
Description NPN SILICON TRANSISTOR
Published May 13, 2016
Detailed Description Shantou Huashan Electronic Devices Co.,Ltd. NPN SILICON TRANSISTOR H8050S █ APPLICATIONS Audio Frequency Amplifier. █ ...
Datasheet PDF File H8050S PDF File

H8050S
H8050S

Overview
Shantou Huashan Electronic Devices Co.
,Ltd.
NPN SILICON TRANSISTOR H8050S █ APPLICATIONS Audio Frequency Amplifier.
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） Tstg——Storage Temperature………………………… -55~150℃ Tj——Juncttion Temperature…………………………………150℃ PC——Collector Dissipation…………………………………625W VCBO——Collector-Base Voltage………………………………40V VCEO——Collector-Emitter Voltage……………………………20V VEBO——Emitter-Base Voltage………………………………5V IC——Collector Current………………………………………500mA TO-92 1―Emitter，E 2―Base，B 3―Collector，C █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics ICBO IEBO HFE（1） HFE（2） VCE(sat） VBE(sat) VBE(on) Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector- Emitter Saturation Voltage Base- Emitter Saturation Voltage Base-Emitter On Voltage BVCBO BVCEO BVEBO Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter- Base Breakdown Voltage █ hFE Classification Min Typ Max Unit Test Conditions 0.
1 μA VCB=25V, IE=0 0.
1 μA VEB=3V, IC=0 85 ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)