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H8050

Shantou Huashan Electronic Devices
Part Number H8050
Manufacturer Shantou Huashan Electronic Devices
Description NPN SILICON TRANSISTOR
Published Feb 26, 2006
Detailed Description Shantou Huashan Electronic Devices Co.,Ltd. H8050 █ NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE R...
Datasheet PDF File H8050 PDF File

H8050
H8050

Overview
Shantou Huashan Electronic Devices Co.
,Ltd.
H8050 █ NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION.
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） Tstg——Storage Temperature………………………… -55~150℃ Tj——Juncttion Temperature…………………………………150℃ PC——Collector Dissipation…………………………………1W VCBO——Collector-Base Voltage………………………………40V VCEO——Collector-Emitter Voltage……………………………25V VEBO——Emitter-Base Voltage………………………………6V IC——Collector Current………………………………………1.
5A TO-92 1―Emitter，E 2―Base，B 3―Collector，C █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol ICBO IEBO HFE Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain VBE VCE(sat） VBE(sat) BVCBO BVCEO BVEBO Cob fT Base- Emitter Voltage Collector- Emitter Saturation Voltage Base- Emitter Saturation Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter- Base Breakdown Voltage Output Capacacitance Current Gain-Bandwidth Product █ hFE Classification Min...


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