DatasheetsPDF.com

RQJ0305EQDQA

Renesas
Part Number RQJ0305EQDQA
Manufacturer Renesas
Description Silicon P-Channel MOS FET
Published May 14, 2016
Detailed Description RQJ0305EQDQA Silicon P Channel MOS FET Power Switching Features • Low gate drive VDSS : –30 V and 2.5 V gate drive • Low...
Datasheet PDF File RQJ0305EQDQA PDF File

RQJ0305EQDQA
RQJ0305EQDQA

Overview
RQJ0305EQDQA Silicon P Channel MOS FET Power Switching Features • Low gate drive VDSS : –30 V and 2.
5 V gate drive • Low drive current • High speed switching • Small traditional package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Notes: Marking is "EQ".
Preliminary Datasheet R07DS0297EJ0300 Rev.
3.
00 Jan 10, 2014 3 D 2 G S 1 1.
Source 2.
Gate 3.
Drain Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation VDSS VGSS ID ID(pulse) Note1 IDR Pch Note2 Channel temperature Tch Storage temperature Tstg Notes: 1.
PW ≤ 10 μs, Duty cycle ≤ 1% 2.
When using the glass epoxy board (FR-4 40 × 40 × 1 mm) Ratings –30 +8 / –12 –2.
4 –10 2.
4 0.
8 150 –55 to +150 (Ta = 25°C) Unit V V A A A W °C °C R07DS0297EJ0300 Rev.
3.
00 Jan 10, 2014 Page 1 of 8 RQJ0305EQDQA Preliminary Electrical Characteristics Item Drain to source breakdown volt...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)