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RQJ0305EQDQS

Renesas
Part Number RQJ0305EQDQS
Manufacturer Renesas
Description Silicon P-Channel MOS FET
Published May 14, 2016
Detailed Description RQJ0305EQDQS Silicon P Channel MOS FET Power Switching Features • Low gate drive VDSS : –30 V and 2.5 V gate drive • Lo...
Datasheet PDF File RQJ0305EQDQS PDF File

RQJ0305EQDQS
RQJ0305EQDQS

Overview
RQJ0305EQDQS Silicon P Channel MOS FET Power Switching Features • Low gate drive VDSS : –30 V and 2.
5 V gate drive • Low drive current • High speed switching • Small traditional power package (UPAK) Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK R ) 1 2 3 4 1G Notes: Marking is "EQ".
Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation Thermal resistance VDSS VGSS ID ID(pulse) Note1 IDR Pch Note2 Rth(ch-a) Note2 Channel temperature Tch Storage temperature Tstg Notes: 1.
PW ≤ 10 µs, Duty cycle ≤ 1% 2.
When using the glass epoxy board (FR-4 40 × 40 × 1 mm) REJ03G1779-0100 Rev.
1.
00 Mar 16, 2009 2, 4 D 1.
Gate 2.
Drain 3.
Source 4.
Drain S 3 Ratings –30 +8 / –12 –3.
4 –12 3.
4 1.
5 83 150 –55 to +150 (Ta = 25°C) Unit V V A A A W °C /W °C °C REJ03G1779-0100 Rev.
1.
00 Mar 16, 2009 Page 1 of 7 RQJ0305EQDQS Electrical Characteristics Item...


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