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AP9476GM-HF

Advanced Power Electronics
Part Number AP9476GM-HF
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published May 15, 2016
Detailed Description Advanced Power Electronics Corp. AP9476GM-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate...
Datasheet PDF File AP9476GM-HF PDF File

AP9476GM-HF
AP9476GM-HF


Overview
Advanced Power Electronics Corp.
AP9476GM-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free D D D D SO-8 G SS S Description AP9476 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.
It provides the designer with an extreme efficient device for use in a wide range of power applications.
BVDSS RDS(ON) ID G 60V 21mΩ 7.
8A D S The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range 60 +20 7.
8 6.
3 40 2.
5 -55 to 150 -55 to 150 V V A A A W ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 50 Unit ℃/W 1 201501123 AP9476GM-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
Typ.
Max.
Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-Source Breakdown Voltage VGS=0V, ID=250uA Static Drain-Source On-Resistance2 VGS=10V, ID=7A VGS=4.
5V, ID=5A Gate Threshold Voltage VDS=VGS, ID=250uA Forward Transconductance VDS=10V, ID=5A Drain-Source Leakage Current VDS=48V, VGS=0V Drain-Source Leakage Current (Tj=70oC) VDS=48V, VGS=0V Gate-Source Leakage VGS=+20V, VDS=0V Total Gate Charge ID=5A Gate-Source Charge VDS=48V Gate-Drain ("Miller") Charge VGS=10V Turn-on D...


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