DatasheetsPDF.com

AP9476GM-HF-3

Advanced Power Electronics
Part Number AP9476GM-HF-3
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 23, 2014
Detailed Description Advanced Power Electronics Corp. AP9476GM-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low Ga...
Datasheet PDF File AP9476GM-HF-3 PDF File

AP9476GM-HF-3
AP9476GM-HF-3


Overview
Advanced Power Electronics Corp.
AP9476GM-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low Gate Charge Fast Switching Performance RoHS-compliant, halogen-free D BV DSS RDS(ON) G S 60V 21mΩ 7.
8A ID Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
The AP9476GM-HF-3 is in the SO-8 package, which is widely used for commercial and industrial surface-mount applications, and is well suited for low voltage applications such as DC/DC converters.
D D D G SO-8 S S S Absolute Maximum Ratings Symbol VDS VGS ID at TA=25°C ID at TA= 70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 60 ±20 7.
8 6.
3 40 Units V V A A A Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range 2.
5 0.
02 -55 to 150 -55 to 150 W W/°C °C °C Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value 50 Unit °C/W Ordering Information AP9476GM-HF-3TR RoHS-compliant halogen-free SO-8, shipped on tape and reel (3000 pcs/reel) ©2010 Advanced Power Electronics Corp.
USA www.
a-powerusa.
com 200806091-3 1/5 Advanced Power Electronics Corp.
Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Drain-Source Leakage Current (Tj=70oC) 2 AP9476GM-HF-3 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=7A VGS=4.
5V, ID=5A VDS=VGS, ID=250uA VDS=10V, ID=5A VDS=48V, VGS=0V VDS=48V, VGS=0V VGS=±20V ID=5A VDS=48V VGS=10V VDS=30V ID=1A RG=3.
3Ω, VGS=10V RD=30Ω VGS=0V VDS=25V f=1.
0MHz Min.
60 1 - Typ.
5 30 5 10 9.
2 6.
4 27 10 140 110 Max.
...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)