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STP33N60M2

STMicroelectronics
Part Number STP33N60M2
Manufacturer STMicroelectronics
Description N-CHANNEL POWER MOSFET
Published May 17, 2016
Detailed Description STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 N-channel 600 V, 0.108 Ω typ., 26 A MDmesh II Plus™ low Qg Power MOSFETs ...
Datasheet PDF File STP33N60M2 PDF File

STP33N60M2
STP33N60M2


Overview
STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 N-channel 600 V, 0.
108 Ω typ.
, 26 A MDmesh II Plus™ low Qg Power MOSFETs in TO-220FP, I2PAK, TO-220 and TO-247 packages Datasheet - production data TAB Features 123 I2PAK TAB 3 2 1 TO-220FP 3 2 1 TO-220 3 2 1 TO-247 Figure 1.
Internal schematic diagram , TAB Order codes STF33N60M2 STI33N60M2 STP33N60M2 STW33N60M2 VDS @ TJmax RDS(on) max ID 26 A(1) 650 V 0.
125 Ω 26 A 1.
Limited by maximum junction temperature.
• Extremely low gate charge • Lower RDS(on) x area vs previous generation • MDmesh™ II technology • Low gate input resistance • 100% avalanche tested • Zener-protected Applications • Switching applications • LCC converters, resonant converters AM15572v1 Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.
These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge.
They are therefore suitable for the most demanding high efficiency converters.
Order codes STF33N60M2 STI33N60M2 STP33N60M2 STW33N60M2 Table 1.
Device summary Marking Package 33N60M2 TO-220FP I2PAK TO-220 TO-247 Packaging Tube November 2013 This is information on a product in full production.
DocID024298 Rev 2 1/19 www.
st.
com Contents Contents STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 1 Electrical ratings .
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3 2 Electrical characteristics .
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4 2.
1 Electrical characteristics (curves) .
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6 3 Test circuits .
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9 4 Package mechanical data .
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10 5 Revision history .
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