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KO3407

Kexin
Part Number KO3407
Manufacturer Kexin
Description P-Channel Enhancement MOSFET
Published May 18, 2016
Detailed Description SMD Type P-Channel Enhancement MOSFET AO3407 (KO3407) MOSFEITC Features VDS (V) = -30V ID = -4.1 A RDS(ON) 52m RDS(ON...
Datasheet PDF File KO3407 PDF File

KO3407
KO3407

Overview
SMD Type P-Channel Enhancement MOSFET AO3407 (KO3407) MOSFEITC Features VDS (V) = -30V ID = -4.
1 A RDS(ON) 52m RDS(ON) 87m (VGS = -10V) (VGS = -4.
5V) D G S +0.
12.
4 -0.
1 SOT-23 2.
9 +0.
1 -0.
1 0.
4 +0.
1 -0.
1 3 12 0.
95 +0.
1 -0.
1 1.
9 +0.
1 -0.
1 0-0.
1 +0.
10.
38 -0.
1 +0.
10.
97 -0.
1 +0.
11.
3 -0.
1 0.
55 0.
4 Unit: mm 0.
1 +0.
05 -0.
01 11.
.
BGasaete 22.
.
ESmiotutrecre 33.
.
cDolrlaeicntor Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta = 25℃ Ta = 70℃ Pulsed Drain Current Power Dissipation Ta = 25℃ Ta = 70℃ Thermal Resistance.
Junction- to-Ambient t ≤10s Steady State Thermal Resistance.
Junction- to-Lead Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA RthJL TJ Tstg Rating -30 ±20 -4.
1 -3.
5 -20 1.
4 1 90 125 60 150 -55 to 150 Unit V A W ℃/W ℃ www.
kexin.
com.
cn 1 SMD Type MOSFEITC P-Channel Enhancement MOSFET AO3407 (KO3407) Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance On state drain current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate resistance Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Maximum Body-Diode Continuous Current Diode Forward Voltage Symbol VDSS IDSS IGSS VGS(th) RDS(On) ID(ON) gFS Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf trr Qrr IS VSD Test Conditions Min Typ Max Unit ID=-250μA, VGS=0V -30 V VDS=-24V, VGS=0V VDS=-24V, VGS=0V, TJ=55℃ -1 μA -5 VDS=0V, VGS=±20V ±100 nA VDS=VGS ID=-250μA -1 -1.
8 -3 V VGS=-10V, ID=-4.
1A 40.
5 52 VGS=-10V, ID=-4.
A TJ=125℃ 57 73 mΩ VGS=-4.
5V, ID=-3A 64 87 VGS=-4.
5V, VDS=-5V -10 A VDS=-5V, ID=-4A 5.
5 8.
2 S 700 VGS=0V, VDS=-15V, f=1MHz 120 pF 75 VG...


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