DatasheetsPDF.com

KO3416

Kexin
Part Number KO3416
Manufacturer Kexin
Description N-Channel MOSFET
Published Jul 3, 2019
Detailed Description SMD Type N-Channel Enhancement MOSFET AO3416 (KO3416) MOSFET ■ Features ● VDS (V) = 20V ● ID = 6.5 A (VGS = 4.5V) ● R...
Datasheet PDF File KO3416 PDF File

KO3416
KO3416

Overview
SMD Type N-Channel Enhancement MOSFET AO3416 (KO3416) MOSFET ■ Features ● VDS (V) = 20V ● ID = 6.
5 A (VGS = 4.
5V) ● RDS(ON) ＜ 22mΩ (VGS = 4.
5V) ● RDS(ON) ＜ 26mΩ (VGS = 2.
5V) ● RDS(ON) ＜ 34mΩ (VGS = 1.
8V) G D S +0.
22.
8 -0.
1 SOT-23-3 2.
9 +0.
2 -0.
1 0.
4 +0.
1 -0.
1 3 12 0.
95 +0.
1 -0.
1 1.
9 +0.
1 -0.
2 +0.
21.
1 -0.
1 +0.
21.
6 -0.
1 0.
55 0.
4 Unit: mm 0.
15 +0.
02 -0.
02 1.
Gate 2.
Source 3.
Drain 0-0.
1 +0.
10.
68 -0.
1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta=25℃ Ta=70℃ Pulsed Drain Current Power Dissipation Ta=25℃ Ta=70℃ Thermal Resistance.
Junction- to-Ambient t≤10sec Steady State Thermal Resistance.
Junction-to-Foot Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA RthJF TJ Tstg Rating 20 ±8 6.
5 5.
2 30 1.
4 0.
9 90 125 80 150 -55 to 150 Unit V A W ℃/W ℃ www.
kexin.
com.
cn 1 SMD Type MOSFET N-Channel Enhancement MOSFET AO3416 (KO3416) ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage On-State Drain Current Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charg Maximum Body-Diode Continuous Current Diode Forward Voltage Symbol VDSS IDSS IGSS VGS(th) ID(on) RDS(On) gFS Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf trr Qrr IS VSD Test Conditions ID=250uA, VGS=0V VDS=20V, VGS=0V VDS=20V, VGS=0V, Ta=70℃ VDS=0V, VGS=±8V VDS=VGS , ID=250μA VDS =5 V, VGS = 4.
5 V VGS=4.
5V, ID=6.
5A VGS=4.
5V, ID=6.
5A TJ=125℃ VGS=2.
5V, ID=5.
5A VGS=1.
8V, ID=5A VDS=5V, ID=6.
5A VGS=0V,VDS=10V,f=1MHz VGS=0V,VDS=0V,f=1MHz VGS=4.
5V, VDS=10V, ID=6.
5A VDS=10V, ,VGEN=4.
5V RL=1.
54Ω,RG=3Ω IF= 6.
5A, dI/dt= 1...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)