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MS7N60

Bruckewell
Part Number MS7N60
Manufacturer Bruckewell
Description N-Channel MOSFET
Published May 20, 2016
Detailed Description MS7N60 N-Channel Enhancement Mode Power MOSFET Description The MS7N60 is a N-channel enhancement-mode MOSFET , providing...
Datasheet PDF File MS7N60 PDF File

MS7N60
MS7N60

Overview
MS7N60 N-Channel Enhancement Mode Power MOSFET Description The MS7N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package Application • Adapter • Switching Mode Power Supply Packing & Order Information 50/Tube ; 1,000/Box Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter VDSS Drain-Source Voltage VGS Gate-Source Voltage Drain Current -Continuous (TC=25°C) ID Drain Current -Continuous (TC=100°C) IDM Drain Current Pulsed IAR Avalanche Current EAS Single Pulsed Avalanche Energy EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt • Drain current limited by maximum junction temperature Value 600 ±30 7.
0 4.
4 28 7.
0 187 7.
0 4.
4 Unit V V A A A V mJ mJ V/ns Publication Order Number: [MS7N60] © Bruckewell Technology Corporation Rev.
A -2014 MS7N60 N-Channel Enhancement Mode Power MOSFET Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter Maximum Temperature for Soldering @ Lead at 0.
125 TL in(0.
318mm) from case for 10 seconds TPKG Maximum Temperature for Soldering @ Package Body for 10 seconds Total Power Dissipation(@TC = 25 °C) 44 W PD Derating Factor above 25 °C TSTG Operating and Storage Temperature TJ Storage Temperature Note: 1.
Repetitive rating; pulse width limited by maximum junction temperature.
2.
IAS≤7A, VDD=50V, L=7mH, VG=10V, starting TJ=+25°C.
3.
ISD≤7A, dI/dt≤200A/μs, VDD≤BVDSS, starting TJ=+25°C.
Value 300 260 44 0.
35 -55 to +150 150 Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambi...


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