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MS7N80

Bruckewell
Part Number MS7N80
Manufacturer Bruckewell
Description N-Channel MOSFET
Published May 20, 2016
Detailed Description MS7N80 800V N-Channel MOSFET Description The MS7N80 is a N-channel enhancement-mode MOSFET, providing the designer with ...
Datasheet PDF File MS7N80 PDF File

MS7N80
MS7N80

Overview
MS7N80 800V N-Channel MOSFET Description The MS7N80 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications Features • Originative New Design • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge : 37nC (Typ.
) • Extended Safe Operating Area • Lower RDS(ON) : 1.
70 Ω (Typ.
) @VGS=10V • 100% Avalanche Tested • RoHS compliant package Application • Adapter • Switching Mode Power Supply Packing & Order Information 50/Tube ; 1,000/Box Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter VDSS Drain-Source Voltage VGS Gate-Source Voltage Drain Current -Continuous (TC=25°C) ID Drain Current -Continuous (TC=100°C) IDM Drain Current Pulsed EAS Single Pulsed Avalanche Energy EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt Value 800 ±30 7.
0 4.
2 26.
5 580 16.
8 4.
5 Unit V V A A A mJ mJ V/ns Publication Order Number: [MS7N80] © Bruckewell Technology Corporation Rev.
A -2014 MS7N80 800V N-Channel MOSFET Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter Total Power Dissipation(@TC = 25 °C) 44 W PD Derating Factor above 25 °C TSTG TJ Operating and Storage Temperature Storage Temperature • Drain current limited by maximum junction temperature Value 57 0.
44 -55 to +150 300 Unit W W/°C °C °C Thermal Resistance Characteristics Symbol Parameter RθJC Junction-to-Case RθJA Junction-to-Ambient Min.
--- Typ.
--- Max.
0.
75 62.
5 Units °C/W On Characteristics Symbol Parameter VGS Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance Test Conditions VDS = VGS,ID = 250μA VGS = 10 V,ID = 3.
5 A Min Typ.
Max.
Units 3.
0 -- 5.
0 V -- 1.
7 2.
1 Ω Off Characteristics Symbol Parame...


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