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SGM2306

SeCoS
Part Number SGM2306
Manufacturer SeCoS
Description N-Channel MOSFET
Published May 20, 2016
Detailed Description SGM2306 Elektronische Bauelemente 5.3A, 20V,RDS(ON) 32m N-Channel Enhancement Mode Power Mos.FET Description RoHS Co...
Datasheet PDF File SGM2306 PDF File

SGM2306
SGM2306

Overview
SGM2306 Elektronische Bauelemente 5.
3A, 20V,RDS(ON) 32m N-Channel Enhancement Mode Power Mos.
FET Description RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-89 The SGM2306 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The SGM2306 is universally used for all commercial-industrial applications.
Features * Capable Of 2.
5V Gate Drive * Lower On-Resistance D G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,3VGS@4.
5V Continuous Drain Current,3VGS@4.
5V Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range REF.
A B C D E F Millimeter Min.
Max.
4.
4 4.
6 4.
05 4.
25 1.
50 1.
70 1.
30 1.
50 2.
40 2.
60 0.
89 1.
20 REF.
G H I J K L M Millimeter Min.
Max.
3.
00 REF.
1.
50 REF.
0.
40 0.
52 1.
40 1.
60 0.
35 0.
41 5° TYP.
0.
70 REF.
Symbol VDS VGS ID@TA=25 oC ID@TA=70 oC IDM...


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