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SGM2308

SeCoS
Part Number SGM2308
Manufacturer SeCoS
Description N-Channel MOSFET
Published May 20, 2016
Detailed Description Elektronische Bauelemente SGM2308 3A, 60V,RDS(ON) 160m N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product ...
Datasheet PDF File SGM2308 PDF File

SGM2308
SGM2308

Overview
Elektronische Bauelemente SGM2308 3A, 60V,RDS(ON) 160m N-Channel Enhancement Mode Power Mos.
FET RoHS Compliant Product Description The SGM2308 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The SGM2308 is universally used for all commercialindustrial surface mount applications.
Features * Simple Drive Requirement * Small Package Outline D G S SOT-89 REF.
A B C D E F Millimeter Min.
Max.
4.
4 4.
6 4.
05 4.
25 1.
50 1.
70 1.
30 1.
50 2.
40 2.
60 0.
89 1.
20 REF.
G H I J K L M Millimeter Min.
Max.
3.
00 REF.
1.
50 REF.
0.
40 0.
52 1.
40 1.
60 0.
35 0.
41 5° TYP.
0.
70 REF.
Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @4.
5V Continuous Drain Current,3 VGS @4.
5V Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID@TA=25oC ID@TA=70 oC IDM PD@TA=25oC Tj, Tstg Ratings 60 ±20 3.
0 2.
3 10 1.
5 0.
01 -55~+150 Unit V V A A A W W / oC oC Thermal Data Parameter Thermal Resistance Junction-ambient3 Max.
Symbol Rthj-a Ratings 83.
3 Unit oC/W http://www.
SeCoSGmbH.
com/ 01-Jun-2002 Rev.
A Any changing of specification will not be informed individual Page 1 of 4 Elektronische Bauelemente SGM2308 3A, 60V,RDS(ON) 160m N-Channel Enhancement Mode Power Mos.
FET Electrical Characteristics( Tj=25oC Unless otherwise specified) Parameter Symbol Drain-Source Breakdown Voltage BVDSS Breakdown Voltage Temp.
Coefficient BVDS/ Tj Gate Threshold Voltage VGS(th) Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current(Tj=70 oC ) IGSS IDSS Static Drain-Source On-Resistance RD S(O N ) Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance Qg Qgs Qgd Td(ON) Tr Td(O...


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