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Si4435

Nanxin
Part Number Si4435
Manufacturer Nanxin
Description P-Channel Enhancement MOSFET
Published May 23, 2016
Detailed Description Features ·Low On resistance. ·-4.5V drive. ·RoHS compliant. Si4435 P-Channel Enhancement MOSFET Si4435 Package Dimens...
Datasheet PDF File Si4435 PDF File

Si4435
Si4435

Overview
Features ·Low On resistance.
·-4.
5V drive.
·RoHS compliant.
Si4435 P-Channel Enhancement MOSFET Si4435 Package Dimensions Specifications Absolute Maximum Ratings at Ta=250C Parameter Symbol Drain-to-Source Voltage VDSS Gate-to-Source Voltage VGSS Drain Current (DC) ID Drain Current (Pulse) IDP Allowable Power Dissipation PD Total Dissipation PT Channel Temperature Tch Storage Temperature Tstg Conditions PW≤10uS, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.
8mm) 1unit Mounted on a ceramic board (1000mm2×0.
8mm) Ratings -30 +20 -8 -50 1.
3 1.
7 150 -55~+150 Unit V V A A W W 0C 0C Electrical Characteristics at Ta=250C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Gate Threshold Voltage Forward Transconductance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance V(BR)DSS IDSS IGSS VGS(th) gFS RDS(ON) RDS(ON) Ciss Coss Crss Conditio...


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