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PZT3904

SeCoS
Part Number PZT3904
Manufacturer SeCoS
Description General Purpose Transistor
Published May 25, 2016
Detailed Description Elektronische Bauelemente RoHS Compliant Product PZT3904 NPN Silicon General Purpose Transistor C FEATURES Power di...
Datasheet PDF File PZT3904 PDF File

PZT3904
PZT3904

Overview
Elektronische Bauelemente RoHS Compliant Product PZT3904 NPN Silicon General Purpose Transistor C FEATURES Power dissipation C B P CM : 1 W˄Tamb=25ć˅ Collector current I CM : 0.
2 A Collector-base voltage V (BR)CBO : 6 0 V Operating and storage junction temperature range T JˈTstg: -55ć to +150ć ELECTRICAL CHARACTERISTICS (Tamb=25Я E unless SOT-223  1.
BASE 2.
COLLECTOR 3.
EMITTER f  f  f 5 5  efe efe efe  f   f  123 otherwise specified) Unit : mm Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Noise figure Delay time Rise time Storage time Fall time http://www.
SeCoSGmbH.
com 01-Jun-2002 Rev.
A V(BR)CBO Ic=10µA,IE=0 60 V V(BR)CEO Ic=1mA,IB=0 40 V V(BR)EBO IE=10µA,IC=0 6V ICBO VCB=60V,IE=0 0.
1 µA IEBO VEB=5V,IC=0 0.
1 µA hFE(1) VCE=10V,IC=0.
1mA 40 hFE(2) VCE=1V,IC=1mA 70 hFE(3) VCE=1V,IC=10mA 100 300 hFE(4) VCE=1V,IC=50mA 60 hFE(5) VCE=1V,IC=100mA 30 VCE(sat) IC=10mA,IB=1mA 0.
2 V VCE(sat) IC=50mA,IB=5mA 0.
3 V VBE(sat) IC=10mA,IB=1mA 0.
65 0.
85 V VBE(sat) IC=50mA,IB=5mA 0.
95 V fT VCE=20V,IC=10mA,f=100MHz 300 MHz Cob VCB=5V,IE=0,f=1MHz VCE=5V,Ic=0.
1mA, NF f=10HZ to 15.
7KHz,Rg=1Kȍ 4 pF 5 dB td VCC=3V, 35 nS tr IC=10mA,VBE(off)=0.
5V,IB1=1mA 35 nS tS VCC=3V, IC=10mA 200 nS tf IB1= IB2= 1mA 50 nS Any changing of specification will not be informed individual Page 1 of 5 Elektronische Bauelemente PZT3904 NPN Silicon General Purpose Transistor Duty Cycle = 2% 300 ns – 0.
5 V +10.
9 V 10 k < 1 ns +3 V 275 10 < t1 < 500 s Duty Cycle = 2% t1 CS < 4 pF* 0 – 9.
1 V′ +10.
9 V 10 k < 1 ns 1N916 +3 V 275 CS < 4 pF* * Total shunt capacitance of test j...


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