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PZT3904

Siemens Semiconductor Group
Part Number PZT3904
Manufacturer Siemens Semiconductor Group
Description NPN Silicon Switching Transistor
Published Apr 16, 2005
Detailed Description NPN Silicon Switching Transistor High DC current gain 0.1 mA to 100 mA q Low collector-emitter saturation voltage q Comp...
Datasheet PDF File PZT3904 PDF File

PZT3904
PZT3904

Overview
NPN Silicon Switching Transistor High DC current gain 0.
1 mA to 100 mA q Low collector-emitter saturation voltage q Complementary type: PZT 3906 (PNP) q PZT 3904 Type PZT 3904 Marking ZT 3904 Ordering Code (tape and reel) Q62702-Z2029 Pin Configuration 1 2 3 4 B C E C Package1) SOT-223 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation, TS = 72 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VCE0 VCB0 VEB0 IC Ptot Tj Tstg Values 40 60 6 200 1.
5 150 – 65 … + 150 Unit V mA W ˚C 122 52 K/W 1) 2) For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm × 40 mm × 1.
5 mm/6 cm2 Cu.
Semiconductor Group 1 5.
91 PZT 3904 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified.
Parameter Symbol min.
DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCB = 30 V, IE = 0 Collector-emitter cutoff current VCE = 30 V, – VBE = 0.
5 V Base-emitter cutoff current VCE = 30 V, – VBE = 0.
5 V DC current gain1) IC = 0.
1 mA, VCE = 1 V IC = 1 mA, VCE = 1 V IC = 10 mA, VCE = 1 V IC = 50 mA, VCE = 1 V IC = 100 mA, VCE = 1 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA Base-emitter saturation voltage1) IC = 10 mA, IC = 1 mA IC = 50 mA, IC = 5 mA V(BR)CE0 V(BR)CB0 V(BR)EB0 ICB0 ICEV IBEV hFE 40 70 100 60 30 VCEsat – – VBEsat – – – – 0.
85 0.
95 – – 0.
2 0.
3 – – – – – – – 300 – – V 40 60 6 – – – – – – – – – – – – 50 50 50 – nA V Values typ.
max.
Unit 1) Pulse test conditions: t ≤ 300 µs, D = 2 % Semiconductor Group 2 PZT 3904 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified.
Parameter Symbol min.
AC characteristics Transition frequency IC = 10 mA...


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