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NGTG50N60FWG

ON Semiconductor
Part Number NGTG50N60FWG
Manufacturer ON Semiconductor
Description IGBT
Published May 27, 2016
Detailed Description NGTG50N60FWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench constructio...
Datasheet PDF File NGTG50N60FWG PDF File

NGTG50N60FWG
NGTG50N60FWG

Overview
NGTG50N60FWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
Features • Optimized for Very Low VCEsat • Low Switching Loss Reduces System Power Dissipation • 5 ms Short−Circuit Capability • These are Pb−Free Devices Typical Applications • Solar Inverters • Uninterruptible Power Supples (UPS) • Motor Drives ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage Collector current @ TC = 25°C @ TC = 100°C VCES 600 V IC A 100 50 Pulsed collector current, Tpulse limited by TJ...


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