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AP4951GM-HF

Advanced Power Electronics
Part Number AP4951GM-HF
Manufacturer Advanced Power Electronics
Description DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published May 28, 2016
Detailed Description Advanced Power Electronics Corp. AP4951GM-HF Halogen-Free Product DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simpl...
Datasheet PDF File AP4951GM-HF PDF File

AP4951GM-HF
AP4951GM-HF

Overview
Advanced Power Electronics Corp.
AP4951GM-HF Halogen-Free Product DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching Performance ▼ RoHS Compliant & Halogen-Free D2 D2 D1 D1 SO-8 G2 S2 G1 S1 BVDSS RDS(ON) ID -60V 96mΩ -3.
4A Description AP4951 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.
It provides the designer with an extreme efficient device for use in a wide range of power applications.
G1 D1 G2 D2 The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow S1 S2 technique and suited for voltage conversion or switch applications.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor -60 +20 -3.
4 -2.
7 -20 2 0.
016 V V A A A W W/℃ TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 62.
5 Unit ℃/W 1 201501125 AP4951GM-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
Typ.
Max.
Units BVDSS ∆BVDSS/∆Tj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-Source Breakdown Voltage VGS=0V, ID=-250uA Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA Static Drain-Source On-Resistance2 VGS=-10V, ID=-3.
4A VGS=-4.
5V, ID=-2.
7A Gate Threshold Voltage VDS=VGS, ID=-250uA Forward Transconductance VDS=-10V, ID=-3.
4A Drain-Source Leakage Current VDS=-60V, VGS=0V Drain-Source Leakage Current (Tj=70...


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