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AP4951GM-HF-3

Advanced Power Electronics
Part Number AP4951GM-HF-3
Manufacturer Advanced Power Electronics
Description Dual P-channel Enhancement-mode Power MOSFETs
Published Jul 13, 2016
Detailed Description Advanced Power Electronics Corp. AP4951GM-HF-3 Dual P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement...
Datasheet PDF File AP4951GM-HF-3 PDF File

AP4951GM-HF-3
AP4951GM-HF-3

Overview
Advanced Power Electronics Corp.
AP4951GM-HF-3 Dual P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement Low Gate Charge Fast Switching Performance RoHS-compliant, halogen-free BVDSS R DS(ON) ID D1 -60V 96mΩ -3.
4A D2 Description G1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The AP4951GM-HF-3 is in the popular SO-8 surface-mount package and is well-suited for use in low-voltage DC/DC conversion and general load-switching applications.
G2 S1 S2 D2 D2 D1 D1 SO-8 (M) G2 S2 G1 S1 Absolute Maximum Ratings Symbol VDS VGS ID at TA=25°C ID at TA=70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Rating -60 ±20 -3.
4 -2.
7 -20 2 0.
016 -55 to 150 -55 to 150 Value 62.
5 Units V V A A A W W/°C °C °C Unit °C/W Ordering Information AP4951GM-HF-3TR : in RoHS-compliant halogen-free SO-8, shipped on tape and reel, 3000pcs/reel ©2010 Advanced Power Electronics Corp.
USA www.
a-powerusa.
com 200711083-3 1/5 Advanced Power Electronics Corp.
AP4951GM-HF-3 Electrical Characteristics at Tj = 25°C (unless otherwise specified) Symbol BVDSS ∆BVDSS/∆Tj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Test Conditions Drain-Source Breakdown Voltage VGS=0V, ID=-250uA Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=-1mA Static Drain-Source On-Resistance2 VGS=-10V, ID=-3.
4A Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70oC) Gate-Source Leakage Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-o...


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