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SSF10N60

SILIKRON
Part Number SSF10N60
Manufacturer SILIKRON
Description N-Channel MOSFET
Published May 28, 2016
Detailed Description Main Product Characteristics: VDSS RDS(on) 600V 0.69Ω (typ.) ID 10A Features and Benefits: TO-220  Advanced MOSFE...
Datasheet PDF File SSF10N60 PDF File

SSF10N60
SSF10N60

Overview
Main Product Characteristics: VDSS RDS(on) 600V 0.
69Ω (typ.
) ID 10A Features and Benefits: TO-220  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature SSF10N60 Marking and pin Assignment Schematic diagram Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-t...


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