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SSF10N60B

Fairchild Semiconductor
Part Number SSF10N60B
Manufacturer Fairchild Semiconductor
Description 600V N-Channel MOSFET
Published Feb 27, 2006
Detailed Description SSF10N60B November 2001 SSF10N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power fie...
Datasheet PDF File SSF10N60B PDF File

SSF10N60B
SSF10N60B

Overview
SSF10N60B November 2001 SSF10N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supplies.
Features • • • • • • 6.
9A, 600V, RDS(on) = 0.
8Ω @VGS = 10 V Low gate charge ( typical 54 nC) Low Crss ( typical 32 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● ◀ ▲ ● ● G! G D S TO-3PF SSF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) SSF10N60B 600 6.
9 4.
3 27.
6 ± 30 ...


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