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KTC3875

HOTTECH
Part Number KTC3875
Manufacturer HOTTECH
Description NPN Transistor
Published May 29, 2016
Detailed Description Plastic-Encapsulate Transistors FEATURES • High hFE • Low noise • Complementary to KTA1504 KTC3875(NPN) Maximum Ratin...
Datasheet PDF File KTC3875 PDF File

KTC3875
KTC3875

Overview
Plastic-Encapsulate Transistors FEATURES • High hFE • Low noise • Complementary to KTA1504 KTC3875(NPN) Maximum Ratings (TA=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Junction Temperature Storage Temperature unless otherwise noted) Symbol Value VCBO VCEO VEBO IC PC TJ Tstg 60 50 5 0.
15 0.
15 150 -55to +150 Unit V V V A W 1.
BASE 2.
EMITTER 3.
COLLECTO SOT-23 ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage VCBO IC=100μA,IE=0 Collector-emitter breakdown voltage VCEO IC= 1mA, IB=0 Emitter-base breakdown voltage VEBO IE= 100μA, IC=0 Collector cut-off current ICBO VCB= 60V, IE=0 Emitter cut-off current IEBO VEB= 5V, IC=0 DC current gain hFE VCE= 6V, IC= 2mA Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 10mA base-emitter saturation voltage VBE(sat) IC=100mA, IB= 10mA Transition frequency Collector output capacitance fT VCE=10V, IC= 1mA Cob VCB=10V,IE=0,f=1MHZ Noise figure NF VCE=6V,IC=0.
1mA,Rg=10kΩ,f=1KHZ Min Typ Max Unit 60 V 50 V 5V 0.
1 μA 0.
1 μA 70 700 0.
1 0.
25 V 1V 80 MHz 2.
0 3.
5 pF 1.
0 10 dB CLASSIFICATION OF hFE Rank Range Marking O 70-140 ALO Y 120-240 ALY GR 200-400 ALG BL 350-700 ALL GUANGDONG HOTTECH INDUSTRIAL CO,.
LTD.
Page:P2-P1 KTC3875 Typical Characteristics Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTRIAL CO,.
LTD.
Page:P2-P2 ...


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