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MUN5311DW1T1

LRC
Part Number MUN5311DW1T1
Manufacturer LRC
Description Dual Bias Resistor Transistors
Published May 31, 2016
Detailed Description LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic...
Datasheet PDF File MUN5311DW1T1 PDF File

MUN5311DW1T1
MUN5311DW1T1

Overview
LESHAN RADIO COMPANY, LTD.
Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network MUN5311DW1T1 Series The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor.
These digital transistors are designed to replace a single device and its external resistor bias network.
The BRT eliminates these individual components by integrating them into a single device.
In the MUN5311DW1T1 series, two complementary BRT devices are housed in the SOT–363 package which is ideal for low power surface mount applications where board space is at a premium.
• Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • Available in 8 mm, 7 inch/3000 Unit Tape and Reel MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 , – minus sign for Q 1 (PNP) omitted) Rating Symbol Value Unit Collector-Base Voltage Collector-Emitter Voltage Collector Current THERMAL CHARACTERISTICS V CBO V CEO IC 50 Vdc 50 Vdc 100 mAdc Characteristic (One Junction Heated) Symbol Max Unit Total Device Dissipation T A = 25°C Derate above 25°C P D 187 (Note 1.
) mW 256 (Note 2.
) 1.
5 (Note 1.
) mW/°C 2.
0 (Note 2.
) Thermal Resistance – Junction-to-Ambient R θJA 670 (Note 1.
) 490 (Note 2.
) °C/W Characteristic (Both Junctions Heated) Symbol Max Total Device Dissipation T A = 25°C Derate above 25°C P D 250 (Note 1.
) 385 (Note 2.
) 2.
0 (Note 1.
) 3.
0 (Note 2.
) Thermal Resistance – Junction-to-Ambient Thermal Resistance – Junction-to-Lead R θJA R θJL 493 (Note 1.
) 325 (Note 2.
) 188 (Note 1.
) 208 (Note 2.
) Junction and Storage Temperature T J , T stg –55 to +150 1.
FR–4 @ Minimum Pad 2.
FR–4 @ 1.
0 x 1.
0 inch Pad Unit mW mW/°C °C/W °C/W °C 6 5 4 1 2 3 SOT-363 CASE 419B STYLE1 6 54 Q2 R1 R2 R2 R1 Q1 12 3 MARKING DIAGRAM 6 54 XX 1 23 xx = Device Marking = (See Page 2) DEVICE MA...


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