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MUN5311DW1T1

ON Semiconductor
Part Number MUN5311DW1T1
Manufacturer ON Semiconductor
Description Dual Bias Resistor Transistors
Published May 31, 2016
Detailed Description MUN5311DW1T1 Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with...
Datasheet PDF File MUN5311DW1T1 PDF File

MUN5311DW1T1
MUN5311DW1T1

Overview
MUN5311DW1T1 Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor.
These digital transistors are designed to replace a single device and its external resistor bias network.
The BRT eliminates these individual components by integrating them into a single device.
In the MUN5311DW1T1 series, two complementary BRT devices are housed in the SOT−363 package which is ideal for low power surface mount applications where board space is at a premium.
Features • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • Available in 8 mm, 7 inch/3000 Unit Tape and Reel • Pb−Free Package is Available MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted) Rating Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc Collector Current IC 100 mAdc THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation TA = 25°C Derate above 25°C Symbol PD Thermal Resistance − Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation TA = 25°C Derate above 25°C RqJA Symbol PD Thermal Resistance − Junction-to-Ambient Thermal Resistance − Junction-to-Lead Junction and Storage Temperature 1.
FR−4 @ Minimum Pad 2.
FR−4 @ 1.
0 x 1.
0 inch Pad RqJA RqJL TJ, Tstg Max 187 (Note 1) 256 (Note 2) 1.
5 (Note 1) 2.
0 (Note 2) 670 (Note 1) 490 (Note 2) Max 250 (Note 1) 385 (Note 2) 2.
0 (Note 1) 3.
0 (Note 2) 493 (Note 1) 325 (Note 2) 188 (Note 1) 208 (Note 2) −55 to +150 Unit mW mW/°C °C/W Unit mW mW/°C °C/W °C/W °C © Semiconductor Components Industries, LLC, 2004 September, 2004 − Rev.
9 1 http://onsemi.
com (3) (2) (1) R1 R2 Q1 R2 R1 Q2 (4) (5) (6) 6 1 SOT−363 CAS...


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