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2SB1185

GME
Part Number 2SB1185
Manufacturer GME
Description Power Transistor
Published Jun 2, 2016
Detailed Description Power Transistor FEATURES  Low VCE(sat). VCE(sat)=-0.5V(TYP.) (IC/IB=-2A/-0.2A)  Complements the 2SD1762. Pb Lead-fre...
Datasheet PDF File 2SB1185 PDF File

2SB1185
2SB1185

Overview
Power Transistor FEATURES  Low VCE(sat).
VCE(sat)=-0.
5V(TYP.
) (IC/IB=-2A/-0.
2A)  Complements the 2SD1762.
Pb Lead-free Production specification 2SB1185 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO VEBO IC PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation DC Pulse Junction and Storage Temperature -50 V -5 V -3 A -4.
5 2W -55 to +150 ℃ X016 Rev.
A www.
gmesemi.
com 1 Production specification Power Transistor 2SB1185 ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified.
Parameter Sym...


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