DatasheetsPDF.com

TMP7N65Z

TRinno
Part Number TMP7N65Z
Manufacturer TRinno
Description N-channel MOSFET
Published Jun 16, 2016
Detailed Description Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package ...
Datasheet PDF File TMP7N65Z PDF File

TMP7N65Z
TMP7N65Z


Overview
Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP7N65Z(G)/TMPF7N65Z(G) BVDSS 650V N-channel MOSFET ID RDS(on) 6.
5A <1.
4W Device TMP7N65Z / TMPF7N65Z TMP7N65ZG / TMPF7N65ZG Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Marking TMP7N65Z / TMPF7N65Z TMP7N65ZG / TMPF7N65ZG Remark RoHS Halogen Free Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL TMP7N65Z(G) TMPF7N65Z(G) 650 ±30 6.
5 6.
5 * 3.
74 3.
74 * 26 26 * 420 6.
5 12 120 39 0.
96 0.
31 4.
5 -55~150 300 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RqJC RqJA TMP7N65Z(G) 1.
04 62.
5 June 2012 : Rev0 www.
trinnotech.
com TMPF7N65Z(G) 3.
2 62.
5 Unit ℃/W ℃/W 1/7 TMP7N65Z(G)/TMPF7N65Z(G) Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test condition Min Typ Max Units OFF Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 µA 650 -- -- V Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V -- IDSS VDS = 520 V, TC = 125°C -- -- 1 µA -- 10 µA Forward Gate-Source Leakage Current IGSSF VGS = 30 V, VDS = 0 V -- -- 100 µA Reverse Gate-Source Leakage Current IGSSR VGS = -30 V, VDS = 0 V -- -- -100 µA ON Gate Threshold Voltage Drain-Source On-Resistance Forward Transconductance (Note 4) VGS(th) VDS = VGS, ID...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)