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TMP7N60

TRinno
Part Number TMP7N60
Manufacturer TRinno
Description FET
Published Aug 1, 2015
Detailed Description Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package ...
Datasheet PDF File TMP7N60 PDF File

TMP7N60
TMP7N60

Overview
Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP7N60/TMPF7N60 TMP7N60G/TMPF7N60G VDSS = 660 V @Tjmax ID = 7A RDS(on) = 1.
25 W(max) @ VGS= 10 V D G S Device TMP7N60 / TMPF7N60 TMP7N60G / TMPF7N60G Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Marking TMP7N60 / TMPF7N60 TMP7N60G / TMPF7N60G Remark RoHS Halogen Free Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL TMP7N60(G) TMPF7N60(G) 600 ±30 7 7* 4.
3 4.
3 * 28 28* 200 7 14.
3 143 46.
6 1.
16 0.
37 4.
5 -55~150 300 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RqJC RqJA April 2010 : Rev1 www.
trinnotech.
com TMP7N60(G) 0.
87 62.
5 TMPF7N60(G) 2.
68 62.
5 Unit ℃/W ℃/W 1/5 TMP7N60/TMPF7N60 TMP7N60G/TMPF7N60G Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test condition Min Typ Max Units OFF Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 µA 600 -- -- V Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- IDSS VDS = 480 V, TC = 125°C -- -- 1 µA -- 10 µA Forward Gate-Source Leakage Current IGSSF VGS = 30 V, VDS = 0 V -- -- 100 nA Reverse Gate-Source Leakage Current IGSSR VGS = -30 V, VDS = 0 V -- -- -100 nA ON Gate Threshold Voltage Drain-Source On-Resistance Forward Transconductance (Note 4) VG...


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